| PART |
Description |
Maker |
| MGFC39V3742A04 MGFC39V3742A |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FLL21E090IY |
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL21E090IY |
L,S-band High Power GaAs FET 升，S波段高功率GaAs场效应管
|
Sumitomo Electric Industries, Ltd.
|
| FLL600IQ-3 |
L-Band Medium & High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| FLL600IQ-3 |
L-Band Medium & High Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
| FLL107ME |
L-BAND MEDIUM & HIGH POWER GAAS FET
|
Fujitsu Microelectronics
|
| FLL21E135IX |
L,S-band High Power GaAs FET 升，S波段高功率GaAs场效应管
|
Sumitomo Electric Industries, Ltd.
|
| FLL300IL-1 FLL300IL-2 FLL300IL-3 |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL200IB-1 FLL200IB-2 FLL200IB-3 |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL200IB-1 FLL200IB-3 |
(FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET
|
Eudyna Devices
|
